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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 375 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212267-STF15N80K5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF15N80K5 CAD Model

Description

STF15N80K5 - N-channel 800 V, 0.29 Ohm typ., 10 A MDmesh™ K5 Power MOSFET in a TO-220FP Package

The STF15N80K5 is a high-performance N-channel Power MOSFET from the reputable semiconductor manufacturer STMicroelectronics. This device is part of the MDmesh™ K5 series, which is known for its excellent efficiency in a wide range of applications, including switch-mode power supplies, lighting, welding, and other high-performance power conversion systems.

With a drain-source voltage (V<sub>DS) of 800 V, the STF15N80K5 is designed to handle high voltage operations, making it an ideal choice for systems that require reliable performance under challenging conditions. The MOSFET features a low on-resistance (R<sub>DS(on)) of only 0.29 Ohm typical, which helps to minimize conduction losses and improve overall system efficiency.

The device boasts a continuous drain current (I<sub>D) of 10 A, ensuring that it can handle significant power throughput without compromise. The TO-220FP package is widely used and appreciated for its ability to dissipate heat effectively, which is crucial for maintaining stability and longevity in power applications.

The STF15N80K5 incorporates advanced MDmesh™ K5 technology, which utilizes a proprietary vertical structure that enhances the device's capability to operate at a high switching frequency with reduced gate charge (Q<sub>g) and improved power density. This technology is specifically engineered to reduce switching losses, making the MOSFET a perfect fit for high-efficiency power conversion systems.

Additional features of the STF15N80K5 include a 100% avalanche tested design, which guarantees robustness and reliability in adverse conditions. The device also provides a fast recovery diode, which is essential for high-speed switching and further reduces losses.

In summary, the STF15N80K5 from STMicroelectronics is a powerful and reliable component that offers a combination of high voltage capability, low on-resistance, and advanced technology for efficient power management. Its TO-220FP package and robust design make it suitable for a broad range of industrial and consumer applications where performance and efficiency are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5386 $53.8510
80+ $1.2625 $101.0000
125+ $1.2230 $152.8750
170+ $1.1836 $201.2120
220+ $1.1441 $251.7020
295+ $1.0258 $302.6110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,000 pieces
MOQ: 35 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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