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STF20NM60D

Part No STF20NM60D
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 10A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 345324-STF20NM60D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF20NM60D CAD Model

Description

The STF20NM60D is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver efficiency and reliability in a wide range of applications. This power MOSFET is based on STMicroelectronics' advanced MDmesh™ technology, which combines the benefits of reduced on-resistance, high switching speed, and improved gate charge to provide superior performance in power conversion applications.

Key Features

  • Voltage Rating: The STF20NM60D is rated for a drain-source voltage (V<sub>DS) of 600V, making it suitable for high-voltage applications.
  • Current Capacity: This MOSFET can handle continuous drain current (I<sub>D) up to 20A, providing ample current handling capability for a variety of uses.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of typically 0.19Ω, this device ensures high efficiency and low conduction losses.
  • Fast Switching Speed: The STF20NM60D features fast switching characteristics, which are essential for reducing switching losses and improving overall efficiency in power converters and inverters.
  • Enhanced dv/dt Capability: The device is engineered to withstand high dv/dt rates, offering better reliability under fast-switching conditions.
  • Gate Charge: It has an optimized gate charge (Q<sub>g) that results in reduced switching losses, which is critical for high-frequency applications.
  • TO-220FP Package: The STF20NM60D comes in a fully isolated TO-220FP package, providing good thermal performance and making it easy to mount on a heatsink for enhanced thermal management.

Applications

The versatility of the STF20NM60D MOSFET makes it ideal for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC/DC Converters
  • Motor Control Systems
  • LED Lighting Solutions
  • Power Factor Correction Circuits
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)

With its robust design and advanced technology, the STF20NM60D from STMicroelectronics is a compelling choice for designers looking to optimize the performance and reliability of their power management systems.

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