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STF7N105K5

Part No STF7N105K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1050V 4A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1050V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 380pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102975-STF7N105K5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF7N105K5 CAD Model

Description

STF7N105K5 - N-channel 1050 V, 2.4 Ω typ., 7 A SuperMESH™ K5 Power MOSFET in a TO-220FP package from STMicroelectronics

The STF7N105K5 is a state-of-the-art N-channel Power MOSFET from the renowned SuperMESH™ K5 series by STMicroelectronics, designed to offer exceptional performance in a TO-220FP package. This powerful semiconductor device is engineered to address the demanding requirements of high efficiency and power density in modern electronic applications. With a breakdown voltage of 1050 V, it is particularly suited for high voltage applications that require a robust and reliable power switching solution.

Featuring a low on-resistance of just 2.4 Ω typical, the STF7N105K5 ensures minimal conduction losses, enhancing the overall efficiency of the system it is integrated into. Its high current capability of 7 A allows it to handle significant power without compromise, making it an excellent choice for a wide range of applications, including switched-mode power supplies, LED lighting, high-efficiency converters, and power management tasks.

The SuperMESH™ K5 technology combines a new vertical structure with a patented strip layout to yield one of the industry's best figures of merit (RDS(on) * area). This innovation significantly reduces on-state resistance while maintaining superior switching performance, which is crucial for reducing energy waste in power-intensive circuits.

Additionally, the STF7N105K5 boasts an improved dv/dt capability, ensuring high reliability and robustness against the harsh conditions that are often encountered in industrial environments. The TO-220FP package also provides excellent thermal performance, ensuring the device operates within safe temperature limits even under high power operation.

To support environmental sustainability goals, the STF7N105K5 is designed in compliance with the stringent RoHS and Halogen-free requirements. This commitment to environmental stewardship ensures that the product is suitable for use in eco-friendly applications and helps manufacturers meet their green initiatives.

In summary, the STF7N105K5 from STMicroelectronics is a high-performance, energy-efficient, and reliable Power MOSFET that is ideal for a variety of power applications. Its advanced technology and robust package design make it a strategic choice for designers looking to optimize their power systems for both performance and sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0106 $51.1802
41+ $2.4703 $101.2823
63+ $2.3931 $150.7653
87+ $2.3159 $201.4833
112+ $2.2387 $250.7344
150+ $2.0071 $301.0650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,792 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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