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STF7N65M2

Part No STF7N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 270pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 1.15 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1037468-STF7N65M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF7N65M2 CAD Model

Description

The STF7N65M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed using the company's innovative MDmesh™ M2 technology. This technology combines the multiple drain process with the company's PowerMESH™ horizontal layout to provide state-of-the-art performance in terms of both on-resistance and dynamic characteristics. This makes the STF7N65M2 an excellent choice for a wide range of high-efficiency applications.

Key Features

  • Voltage Rating: The device boasts a high voltage rating of 650 V, which is suitable for various applications that demand high voltage operations.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 1.2 Ω (typical), it provides efficient power conversion, which is crucial for energy-saving applications.
  • Current Capacity: The MOSFET can handle a continuous drain current of 7 A, making it robust for handling high current loads.
  • Package: Housed in a TO-220FP package, the STF7N65M2 offers a good balance between thermal performance and compactness, suitable for space-constrained applications.
  • High dv/dt Capability: This device is designed to handle high dv/dt rates, ensuring reliability under fast-switching conditions.
  • Improved ESD Capability: The MOSFET comes with enhanced Electrostatic Discharge (ESD) protection, reducing the risk of damage during handling and operation.

Applications

The STF7N65M2 is versatile and can be used in a variety of applications, including Switch Mode Power Supplies (SMPS), LED lighting, high-efficiency converters, and Power Factor Correction (PFC) circuits. Its robustness and efficiency also make it suitable for industrial applications, such as motor drives and power management systems.

Conclusion

In conclusion, the STF7N65M2 from STMicroelectronics is a powerful and reliable component that offers great efficiency for power management solutions. Its advanced MDmesh™ M2 technology, combined with its high voltage capability, low on-resistance, and high current handling, make it a go-to MOSFET for designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1716 $58.5800
125+ $0.9614 $120.1750
190+ $0.9314 $176.9660
260+ $0.9014 $234.3640
335+ $0.8713 $291.8855
445+ $0.7812 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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