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STF8N65M5

Part No STF8N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 690pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 083811-STF8N65M5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF8N65M5 CAD Model

Description

STF8N65M5 - N-channel 650 V, 1.2 Ω typ., 6 A MDmesh™ M5 Power MOSFET in a TO-220FP package

The STF8N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, renowned for its innovative semiconductor solutions. This Power MOSFET is a part of the MDmesh™ M5 series, which is well-known for its excellent energy efficiency and performance in high-voltage applications. Designed with the latest advancements in power technology, the STF8N65M5 is a perfect choice for a wide range of power applications, including switched-mode power supplies, lighting, and industrial applications.

With a voltage rating of 650 V, the STF8N65M5 can comfortably handle high-voltage operations while maintaining robustness and reliability. It features an extremely low on-resistance (R<sub>DS(on)) of just 1.2 Ω typical, which ensures minimal power loss and heat generation during operation. The device's 6 A current rating further underscores its capability to manage significant power levels, making it an ideal choice for demanding applications.

The STF8N65M5 comes in a fully insulated TO-220FP package, which not only provides excellent thermal performance but also ensures a high level of safety by preventing any accidental contacts with the device's conductive areas. This package is well-suited for through-hole mounting, which is beneficial for applications requiring strong mechanical anchoring to the PCB and ease of heatsinking.

One of the key advantages of the MDmesh™ M5 technology is its remarkably low gate charge (Q<sub>g), which translates into faster switching speeds and reduced switching losses. This feature, along with the device's optimized capacitance profile, enables designers to achieve high-efficiency power conversion in their applications.

STMicroelectronics has also put significant emphasis on the device's ruggedness, with features such as 100% avalanche tested and high dv/dt capability, ensuring the MOSFET can withstand harsh operating conditions. Additionally, the STF8N65M5 is compliant with the stringent industrial standards, ensuring a reliable performance in a wide array of environments.

In summary, the STF8N65M5 is an excellent choice for designers looking for a high-voltage, high-efficiency, and robust Power MOSFET. With its advanced technology, reliable package, and performance characteristics, it stands out as a key component in power management and conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2608 $51.9984
54+ $1.8551 $100.1754
84+ $1.7971 $150.9564
116+ $1.7391 $201.7356
149+ $1.6812 $250.4988
200+ $1.5072 $301.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,742 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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