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STGW15H120DF2

Part No STGW15H120DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Very fast recovery antiparallel diode | IGBT H-SERIES 1200V 15A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 15A
Maximum Power 259W
Switching Energy 380μJ (on), 370μJ (off)
Input Type Standard
Gate Charge 67nC
Td (on/off) at 25°C 23ns/111ns
Test Condition 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 231ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 734758-STGW15H120DF2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGW15H120DF2 CAD Model

Description

STGW15H120DF2 - IGBT Transistor from STMicroelectronics

The STGW15H120DF2 is a high-speed IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed to deliver efficient and reliable performance for a wide range of power switching applications. This advanced semiconductor device is optimized for minimal conduction and switching losses, making it an ideal choice for energy-sensitive systems.

Key Features:

  • High Voltage Capability: The STGW15H120DF2 is capable of handling high voltages, with a collector-emitter breakdown voltage of 1200V, making it suitable for applications requiring high breakdown voltage.
  • Low On-Voltage Drop (VCE(sat)): It provides an exceptionally low on-voltage drop, which enhances overall efficiency by reducing conduction losses.
  • Fast Switching Speed: The fast switching characteristics of this IGBT enable high-frequency operation, which is essential for applications like switch-mode power supplies and inverter circuits.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, which provides protection against reverse voltage spikes and reduces component count in circuit designs.
  • High Current Rating: With a continuous collector current rating of 30A at 25°C, the STGW15H120DF2 can handle significant power levels, appropriate for demanding environments.
  • Robustness: The device is designed to be rugged and reliable, with built-in features that provide stability and longevity even under harsh operating conditions.

Applications:

The STGW15H120DF2 is versatile and can be used in a variety of applications, including but not limited to:

  • Motor drives and controls
  • Uninterruptible power supplies (UPS)
  • Power factor correction circuits
  • Induction heating systems
  • Renewable energy inverters (solar, wind)
  • Welding equipment

STMicroelectronics' STGW15H120DF2 embodies the state-of-the-art technology in power electronics, offering designers a robust, high-performance IGBT option that can significantly enhance the efficiency and reliability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 16,466 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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