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STGWT30V60F

Part No STGWT30V60F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 260 W
Switching Energy 383µJ (on), 233µJ (off)
Input Type Standard
Gate Charge 163 nC
Td (on/off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Base Product Number STGWT30
Other Names -497-13963-5,STGWT30V60F,497-13963-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277381-STGWT30V60F
Ultra Librarian 3D Model Ultra Librarian STGWT30V60F CAD Model

Description

The STGWT30V60F from STMicroelectronics is a cutting-edge power semiconductor device designed to meet the high efficiency and reliability requirements of modern power applications. This device is part of the field stop IGBT (Insulated Gate Bipolar Transistor) product line, which is renowned for its outstanding performance in terms of switching speed and energy efficiency.

Key Features

  • High Voltage Capability: With a collector-emitter voltage (VCE) of 600V, the STGWT30V60F is well-suited for applications requiring high voltage operation.
  • Current Rating: It can handle a continuous collector current (IC) of up to 30A at 25°C, making it capable of powering a wide range of electrical loads.
  • Low On-Voltage Drop (VCE(sat)): The device has a low saturation voltage, which translates to reduced conduction losses and improved overall efficiency.
  • High-Speed Switching: The fast switching characteristics of the STGWT30V60F make it ideal for high-frequency applications, contributing to lower switching losses.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, providing an integrated solution that simplifies design and enhances performance.
  • Robustness: The device offers excellent ruggedness and thermal performance thanks to its maximum operating junction temperature of 175°C.

Applications

The STGWT30V60F is suitable for a diverse range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Renewable Energy Inverters
  • Welding Equipment

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGWT30V60F is no exception, as it is built with state-of-the-art manufacturing processes and subjected to rigorous testing to ensure it meets the highest standards of performance and reliability.

Environmental Impact

STMicroelectronics also prioritizes environmental sustainability. The STGWT30V60F is designed with eco-friendly materials and complies with international environmental regulations, contributing to the development of green energy solutions.

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