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STH240N10F7-2

Part No STH240N10F7-2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Ultra low on-resistance | MOSFET N-CH 100V 180A H2PAK-2
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 180A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 11550pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2Pak-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261070-STH240N10F7-2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STH240N10F7-2 CAD Model

Description

STH240N10F7-2 Power MOSFET by STMicroelectronics

The STH240N10F7-2 is a state-of-the-art N-channel Power MOSFET designed by the renowned semiconductor manufacturer STMicroelectronics. This high-performance component is part of STMicroelectronics' STripFET™ F7 series, which is known for its excellent switching performance and improved energy efficiency. The STH240N10F7-2 is ideally suited for a wide range of power applications, including but not limited to, power supplies, motor control, and automotive systems.

Key Features:

  • Low On-Resistance: The STH240N10F7-2 boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 9.5 mΩ max, contributing to its high efficiency and reduced power losses during operation.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 180 A, this MOSFET can handle high current applications with ease, making it an ideal choice for demanding environments.
  • Enhanced Power Density: The device is encapsulated in a compact and robust PowerFLAT 5x6 dual-side cooling package, which allows for excellent thermal performance and power density.
  • 100% Avalanche Tested: Ensuring reliability and robustness, each unit is rigorously tested for avalanche energy withstanding, giving designers confidence in their power circuitry.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • DC/DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • High Current Switching

The STH240N10F7-2 incorporates advanced silicon technology, providing an optimized balance between on-state voltage and switching speed. This balance ensures that the MOSFET can deliver high performance while maintaining efficiency in power conversion processes.

Designers and engineers can leverage the STH240N10F7-2's robustness and efficiency to build more compact, lighter, and energy-saving electronic products. With its exceptional electrical characteristics and thermal performance, the STH240N10F7-2 from STMicroelectronics is a powerful and reliable component for next-generation power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4150 $56.6000
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
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