The STH290N4F6-2AG is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance products. This MOSFET is part of STMicroelectronics' STripFET F6 series, which is renowned for its low on-resistance and high switching performance.

Key Features

• Low On-Resistance (R_DS(on)): The device boasts an extremely low on-state resistance, which enhances its efficiency in various applications by minimizing conduction losses.
• High Current Capability: With a continuous drain current rating of up to 80 A, the STH290N4F6-2AG can handle high current loads, making it suitable for demanding power applications.
• High Switching Performance: The fast switching speed of this MOSFET is ideal for high-frequency power conversion systems, contributing to improved overall system efficiency.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in applications where the device may be subjected to high energy pulses.
• Low Gate Charge (Q_g): The optimized gate charge enables efficient switching at high speeds, reducing power losses during the switching phase.

Applications

The STH290N4F6-2AG is designed to meet the demanding requirements of a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Motor Drives
• Automotive applications
• Power Management Solutions

Package and Quality

The STH290N4F6-2AG is housed in a highly efficient H2PAK-2 package, which offers excellent thermal performance and is suitable for compact designs. The device meets STMicroelectronics' high standards for quality and reliability, ensuring performance in even the most challenging environments.

For designers and engineers looking for a robust and efficient power MOSFET solution, the STH290N4F6-2AG from STMicroelectronics represents an outstanding choice, delivering both performance and reliability in a wide array of power applications.