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STI20N65M5

Part No STI20N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 18A I2PAK  /  N-Channel 650 V 18A (Tc) 130W (Tc) Through Hole I2PAK (TO-262)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1434 pF @ 100 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13774-5,497-13774-5
Standard Package 1,000
Win Source Part Number 1096895-STI20N65M5
Ultra Librarian 3D Model Ultra Librarian STI20N65M5 CAD Model

Description

The STI20N65M5 is a state-of-the-art MDmesh™ V Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of the fifth generation of MDmesh technology which is renowned for its excellent on-state resistance (R<sub>DS(on)) in relation to the die area, reducing conduction losses and improving efficiency.

With a voltage rating of 650V, the STI20N65M5 is optimized for high voltage applications, making it an ideal choice for switch mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and other power conversion systems that require high efficiency and reliability.

Key Features:

  • Advanced Technology: Built with the innovative MDmesh V technology, which combines the benefits of reduced gate charge and low output capacitance.
  • High Voltage Rating: With a 650V drain-source breakdown voltage, this MOSFET is capable of handling high voltage applications with ease.
  • Low On-Resistance: The device boasts an extremely low on-state resistance, minimizing conduction losses and enhancing overall efficiency.
  • High Current Capability: It can handle continuous drain currents up to 20A, making it suitable for a wide range of power applications.
  • Reduced Switching Losses: Fast switching speeds lead to reduced losses during the switching process, contributing to the overall efficiency of the system.
  • Robust Design: The MOSFET is encapsulated in a TO-220 package, known for its high durability and thermal performance.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • Welding Equipment
  • Solar Inverters
  • Power Converters
  • High-Efficiency Power Management Systems

The STI20N65M5 is a testament to STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the needs of modern electronic systems. With its combination of high-voltage capability, low on-resistance, and high current handling, this Power MOSFET is a top-tier component for designers looking to enhance the performance and efficiency of their power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.6422 $51.0642
27+ $3.8090 $102.8430
41+ $3.6900 $151.2900
57+ $3.5709 $203.5413
73+ $3.4519 $251.9887
97+ $3.0948 $300.1956
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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