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STL7N60M2

Part No STL7N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.8nC @ 10V
Max Input Capacitance 271pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 4W (Ta), 67W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFLAT (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 143803-STL7N60M2
Family Name STL7N60M2
Introduction Date August 03, 2015
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STL7N60M2 CAD Model

Description

STL7N60M2 - Power MOSFET by STMicroelectronics

The STL7N60M2 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This powerful component is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, power converters, motor drivers, and other power-intensive electronic circuits.

Constructed with the advanced MDmesh™ M2 technology, the STL7N60M2 boasts a very low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses. The MOSFET operates at a drain-source voltage (V<sub>DS) of up to 600V, making it well-suited for high-voltage applications. Additionally, it can handle a continuous drain current (I<sub>D) of up to 7A, providing ample current capacity for demanding loads.

One of the key features of the STL7N60M2 is its enhanced power density, which results from its optimized cell layout. This allows for a compact design without sacrificing performance, enabling engineers to reduce the size of their power management solutions. The MOSFET also offers a low gate charge (Q<sub>g), which translates to reduced switching losses and improved overall efficiency during operation.

The device is encapsulated in a robust package that ensures excellent thermal performance and durability. The STL7N60M2 is also characterized by a fast recovery diode, which is essential for high-speed switching applications and helps to minimize electromagnetic interference (EMI) issues.

STMicroelectronics has designed the STL7N60M2 with the environment in mind. The MOSFET is compliant with RoHS and Halogen-free standards, making it an eco-friendly choice for the environmentally conscious designer.

In summary, the STL7N60M2 from STMicroelectronics is an optimal solution for designers looking to enhance the efficiency, reliability, and compactness of their power management systems. Its advanced technology, high voltage capability, and low on-resistance make it a versatile and high-performing component in the power electronics domain.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9864 $59.1840
145+ $0.8097 $117.4065
225+ $0.7842 $176.4450
305+ $0.7588 $231.4340
395+ $0.7334 $289.6930
530+ $0.6584 $348.9520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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