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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 190nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 054252-STP150NF55
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP150NF55 CAD Model

Description

STP150NF55 - N-Channel 55V - 0.0075Ω - 150A - TO-220 STripFET™ II Power MOSFET

The STP150NF55 is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, designed to deliver efficiency and power for a wide range of applications. This advanced MOSFET is a part of the STripFET™ II family, which is well-known for its low on-resistance and low gate charge, making it an ideal choice for high-efficiency power management tasks.

With a drain-source voltage (V<sub>DS) of 55V, the STP150NF55 is capable of handling moderate voltage operations while providing a high continuous drain current of 150A, making it suitable for high-current applications. The device's low on-resistance of just 0.0075Ω minimizes conduction losses, thus enhancing overall system efficiency. This feature is especially beneficial in applications that demand high switching frequencies and low power dissipation.

The STP150NF55 is housed in a TO-220 package, which is widely used for its robustness and excellent thermal performance. The package ensures that the MOSFET can handle high levels of power without compromising the integrity of the device, thanks to its ability to efficiently dissipate heat. This makes the STP150NF55 a reliable choice for power conversion applications such as DC-DC converters, motor drives, and other power-intensive uses.

Additionally, the MOSFET features a threshold voltage (V<sub>GS(th)) that ensures low gate drive requirements. This characteristic allows for simpler drive circuits and can contribute to cost savings in the overall design. The fast switching speed of the STP150NF55 reduces transition losses, further enhancing the efficiency of applications where it is deployed.

STMicroelectronics has designed the STP150NF55 with the intent of providing a solution that not only meets the needs of modern power management requirements but also maintains a commitment to environmental sustainability. The device is compliant with RoHS standards, ensuring that no hazardous substances are used in its manufacture.

Overall, the STP150NF55 from STMicroelectronics is a testament to the company's dedication to producing high-quality, efficient, and reliable power MOSFETs for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.7864 $66.8736
57+ $2.2870 $130.3590
88+ $2.2159 $194.9992
121+ $2.1435 $259.3635
157+ $2.0723 $325.3511
209+ $1.8576 $388.2384
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 5,539 pieces
MOQ: 24 pcs
Order Increment : 1 piece
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