The STP16NM50N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ series, which is renowned for its excellent on-resistance and high switching performance. The device is specifically designed to address the efficiency and power density needs of a wide range of electronic applications.

Key Features

• Voltage Rating: The STP16NM50N operates at a drain-source voltage of 500 V, making it suitable for high-voltage applications.
• Low On-Resistance: With an on-resistance of only 0.22 ohm, this MOSFET ensures minimal conduction losses and higher efficiency in power conversion.
• Current Capacity: It can handle continuous drain currents up to 16 A, providing robust performance for heavy-duty operations.
• MDmesh™ Technology: Utilizing STMicroelectronics' innovative MDmesh™ technology, the STP16NM50N achieves optimal power management by combining low gate charge and low crss with extremely low RDS(on).
• High dv/dt Capability: The device is capable of withstanding high voltage transients, ensuring reliability under harsh conditions.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, which guarantees stability and long-term reliability.

Applications

The STP16NM50N Power MOSFET is ideal for a variety of applications, including:

• Switching power supplies
• Motor control systems
• Power inverters
• LED lighting solutions
• High-performance computing
• Automotive applications

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STP16NM50N is no exception, as it is designed and manufactured to ensure optimal performance in even the most demanding environments. Whether you are developing a power supply unit or designing a sophisticated motor control system, the STP16NM50N provides the efficiency, reliability, and power density required for your advanced electronic designs.