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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Maximum) @ If 1.75V @ 10A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 100μA @ 650V
Capacitance @ Vr, F 480pF @ 0V, 1MHz
Mounting Style Through Hole
Package TO-220-2
Manufacturer Package TO-220AC
Operating Temperature - Junction -40°C ~ 175°C
Win Source Part Number 1261938-STPSC10H065D
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STPSC10H065
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian STPSC10H065D CAD Model

Description

STPSC10H065D - A Robust SiC Diode from STMicroelectronics

The STPSC10H065D is a high-performance silicon carbide (SiC) power Schottky diode designed by STMicroelectronics, a leader in semiconductor solutions. This diode is part of ST's SiC diode series that combines state-of-the-art technology with cutting-edge performance to deliver superior efficiency and reliability in a wide range of applications.

Featuring a 650V repetitive reverse voltage and a 10A non-repetitive forward current, the STPSC10H065D is engineered to handle high surge events and provide stable performance over its lifespan. Its low forward voltage drop (V<sub>F) reduces conduction losses, which translates to improved overall system efficiency, making it an excellent choice for energy-sensitive designs.

The diode's high switching speed and reduced recovery time are attributed to the absence of a reverse recovery charge (Q<sub>rr), a characteristic inherent to SiC diodes. This feature makes the STPSC10H065D particularly suitable for high-frequency applications where efficiency is paramount, such as in power supplies, solar inverters, and electric vehicle (EV) charging systems.

The robustness of the STPSC10H065D is further enhanced by its high junction temperature capability, which can withstand up to 175°C. This allows for a more reliable operation even under extreme conditions and reduces the need for additional cooling systems, thus saving space and cost in the design.

Packaged in a surface-mount DPAK (TO-252), the STPSC10H065D is designed for easy integration into various circuit designs. Its compact footprint is ideal for space-constrained applications, while still providing the thermal performance required for efficient heat dissipation.

In summary, the STPSC10H065D SiC diode from STMicroelectronics is a powerful and efficient solution for designers looking to improve system performance, reduce energy consumption, and ensure reliability in high-power and high-frequency electronic systems. Its advanced features and robust design make it a go-to choice for forward-thinking engineers and industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1102 $50.6448
58+ $1.7315 $100.4270
90+ $1.6774 $150.9660
124+ $1.6233 $201.2892
160+ $1.5691 $251.0560
214+ $1.4068 $301.0552
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 20,000 pieces
MOQ: 24 pcs
Order Increment : 1 piece
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