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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series STripFET™
Package Tape & Reel (TR),Cut Tape (CT)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.5W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number STS4D
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-4397-2-NDR,497-4397-1,497-4397-2,497-4397-1-NDR
Standard Package 2,500
Win Source Part Number 1119448-STS4DPFS30L
Ultra Librarian 3D Model Ultra Librarian STS4DPFS30L CAD Model

Description

The STS4DPFS30L from STMicroelectronics is a high-performance, low-voltage, dual N-channel Power MOSFET designed to deliver efficiency and power density in a compact footprint. This semiconductor device is a critical component for modern electronic circuits, providing efficient power management and switching capabilities.

Key Features

  • Low On-Resistance: The STS4DPFS30L boasts an extremely low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency in applications.
  • High Switching Speed: Fast switching characteristics make it suitable for high-frequency applications, contributing to reduced switching losses and better performance.
  • Advanced Technology: Manufactured with ST's advanced process technology, this MOSFET ensures high reliability and performance consistency.
  • Dual MOSFET Configuration: The dual N-channel configuration allows for flexibility in design, enabling compact circuit designs by sharing a common drain.
  • Power Saving: Its low threshold voltage ensures low gate drive power, which is essential for battery-powered applications where power conservation is critical.
  • Thermal Performance: The device has been optimized for improved thermal performance, ensuring stability and longevity even under high temperature operating conditions.

Applications

The STS4DPFS30L is versatile and can be used in a wide range of applications, including:

  • Power Management Solutions
  • DC/DC Converters
  • Battery Powered Systems
  • Load Switches
  • Motor Control Circuits

Product Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 4A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to 150°C

With its robust package and proven performance, the STS4DPFS30L is a go-to choice for design engineers looking to enhance power efficiency in their next project.

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