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STW20NK70Z

Part No STW20NK70Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 20A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 150μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 285 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 212428-STW20NK70Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW20NK70Z CAD Model

Description

The STW20NK70Z is a high-performance N-Channel MDmesh Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of high voltage applications. This power MOSFET leverages STMicroelectronics' innovative MDmesh technology, which combines the benefits of reduced on-resistance and high switching speeds while minimizing energy losses during operation.

With a drain-source voltage (VDS) of 700V, the STW20NK70Z is well-suited for applications that require a high breakdown voltage to handle large voltage spikes and surges without compromising performance. The device's low on-resistance of 0.25 Ohm ensures minimal conduction losses, making it ideal for high-efficiency power supplies, lighting applications, high-performance converters, and motor control systems.

The STW20NK70Z boasts a continuous drain current (ID) of 17A, enabling it to handle significant current loads while maintaining thermal stability. The MOSFET's maximum power dissipation of 190W further underscores its ability to manage high power levels with ease. Additionally, the device is designed to operate within a wide temperature range, ensuring consistent performance even under varying environmental conditions.

This power MOSFET comes in a TO-247 package, which is known for its robustness and excellent thermal characteristics, providing enhanced heat dissipation for improved reliability. The package's through-hole mounting design ensures secure and durable connections, which is crucial for high-power and high-voltage circuits.

The STW20NK70Z also features fast switching characteristics, thanks to its low gate charge (QG) and low input capacitance (Ciss), which reduce switching losses and improve overall system efficiency. This makes the MOSFET a perfect choice for applications where fast switching is a critical requirement.

In summary, the STW20NK70Z Power MOSFET from STMicroelectronics is a robust, high-voltage component that offers a combination of high efficiency, reliability, and performance. Its advanced MDmesh technology and thermal properties make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.7960 $57.9600
25+ $4.7558 $118.8950
38+ $4.6072 $175.0736
52+ $4.4585 $231.8420
67+ $4.3099 $288.7633
90+ $3.8641 $347.7690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,780 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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