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STW24N60M2

Part No STW24N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1060pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 037967-STW24N60M2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW24N60M2 CAD Model

Description

STW24N60M2 - N-channel 600 V, 0.190 Ohm typ., 17 A MDmesh™ M2 Power MOSFET in a TO-247 package

The STW24N60M2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET that is designed using the innovative MDmesh™ M2 technology. This device is particularly suitable for high efficiency applications, thanks to its excellent on-state resistance and superior switching performance. The MOSFET comes in a robust and reliable TO-247 package, making it ideal for a wide range of high voltage and high power applications.

Key Features:

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600 V, the STW24N60M2 is capable of handling high voltage applications with ease, providing a wide safety margin for electrical equipment.
  • Low On-Resistance: The device boasts an on-resistance (R<sub>DS(on)) of only 0.190 Ohm typical, which results in reduced conduction losses and improved overall efficiency.
  • High Current Rating: The MOSFET has a continuous drain current (I<sub>D) of 17 A, allowing it to handle high current loads effectively.
  • MDmesh™ M2 Technology: Utilizing the latest generation of STMicroelectronics' proprietary MDmesh technology, the STW24N60M2 offers a perfect blend of low gate charge (Q<sub>g), low crss, and high dv/dt capability, which translates to reduced switching losses.
  • TO-247 Package: This package is known for its high power dissipation and ability to handle high currents, making it a preferred choice for demanding applications.

Applications:

The STW24N60M2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High Performance AC-DC Converters
  • Welding Equipment
  • UPS Systems
  • Solar Inverters
  • Motor Drives

The combination of high voltage capability, low on-resistance, and high current rating makes the STW24N60M2 an excellent choice for designers looking for a reliable and efficient Power MOSFET solution. With the backing of STMicroelectronics' commitment to quality, this component is set to deliver top-notch performance in your power management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8489 $50.9340
130+ $0.7952 $103.3760
200+ $0.7684 $153.6800
280+ $0.7146 $200.0880
365+ $0.6878 $251.0470
455+ $0.6609 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 58,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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