STW69N65M5 - STMicroelectronics

The STW69N65M5 is a state-of-the-art N-channel 650 V, 59 mOhm typ., 46 A MDmesh™ M5 Power MOSFET designed and manufactured by STMicroelectronics. This device is part of the MDmesh M5 series, which utilizes ST's innovative super-junction technology to offer extremely low on-resistance (Rds(on)), reduced gate charge, and excellent switching performance.

Key Features

• High Voltage Capability: With a breakdown voltage of 650 V, the STW69N65M5 is suitable for high voltage applications, providing a robust and reliable solution for power conversion systems.
• Low On-Resistance: Featuring a typical on-resistance of 59 mOhm, this MOSFET ensures high efficiency and minimal power loss during operation, making it ideal for power supply designs.
• High Current Rating: The device can handle a continuous current of 46 A, making it capable of supporting high current loads with ease.
• Reduced Gate Charge: The optimized gate charge of the STW69N65M5 enables faster switching speeds, which contributes to improved overall performance in switching applications.
• Enhanced Switching Performance: With its fast recovery diode and low intrinsic capacitances, the device offers enhanced switching performance, which is crucial for reducing switching losses in high-frequency operations.

Applications

The STW69N65M5 is designed for a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Power Factor Correction Circuits

Package and Quality

The STW69N65M5 is housed in a TO-247 long leads package, which is known for its high power dissipation and thermal efficiency. This package is suitable for through-hole mounting, which simplifies the PCB design process. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception, meeting stringent industry standards for performance and reliability.