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STWA75N60M6

Part No STWA75N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 72A TO247 / N-Channel 600 V 72A (Tc) 446W (Tc) Through Hole TO-247 Long Leads
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 100 V
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247 Long Leads
Case / Package TO-247-3
Base Product Number STWA75
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-STWA75N60M6,497-18502,497-18502-ND,-1138-STWA75N60M6
Standard Package 30
Win Source Part Number 1324127-STWA75N60M6
Ultra Librarian 3D Model Ultra Librarian STWA75N60M6 CAD Model

Description

STWA75N60M6 - High Performance N-Channel Power MOSFET by STMicroelectronics

The STWA75N60M6 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of STMicroelectronics' MDmesh™ M6 series, which is renowned for its outstanding efficiency and thermal performance. The MOSFET is well-suited for a wide range of high-power applications, including switched-mode power supplies (SMPS), high-efficiency converters, and power management solutions.

With a maximum continuous drain current (I<sub>D) of 75A and a drain-source voltage (V<sub>DS) of 600V, the STWA75N60M6 provides robust performance for demanding power applications. Its low on-resistance (R<sub>DS(on)) of only 0.029 Ω (typical value) at 10V ensures minimal conduction losses, which is crucial for energy-sensitive designs. This feature, combined with the device's high switching speeds, makes it an excellent choice for applications requiring high efficiency and power density.

The STWA75N60M6 boasts a wide operating temperature range, handling junction temperatures from -55°C up to 150°C, which ensures reliable operation even under extreme conditions. Its package is designed with a very low stray inductance, which minimizes switching losses and enhances overall performance.

One of the key advantages of this MOSFET is its MDmesh™ M6 technology, which employs a proprietary vertical structure. This technology enables the device to achieve a very low gate charge (Q<sub>g), reducing the power dissipation during switching events. The result is improved power efficiency and a reduction in total energy consumption for the end application.

For ease of integration, the STWA75N60M6 is available in a surface-mount package, which is compatible with automated assembly processes and is ideal for compact and high-density power circuit designs. Its robust design and high reliability make it an excellent choice for designers looking to improve the performance and efficiency of their power conversion systems.

In summary, the STWA75N60M6 from STMicroelectronics represents a blend of cutting-edge technology and performance, optimized for high-efficiency power applications that demand reliability and power integrity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.8732 $53.6196
7+ $14.6652 $102.6564
11+ $14.2069 $156.2759
15+ $13.7486 $206.2290
19+ $13.2903 $252.5157
26+ $11.9154 $309.8004
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,180 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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