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Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr STMicroelectronics
Package Tube
Driven Configuration High-Side
Channel Type Single
Number of Drivers 1
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 12V ~ 26V
Logic Voltage - VIL, VIH 0.8V, 4.2V
Current - Peak Output (Source, Sink) 1.5A, 2.3A
Input Type Non-Inverting
Rise / Fall Time (Typ) 130ns, 75ns (Max)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package 14-SO
Base Product Number TD350
Standard Package 50
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1349048-TD350E
Ultra Librarian 3D Model Ultra Librarian TD350E CAD Model

Description

Introducing the TD350E Advanced IGBT/MOSFET Driver from STMicroelectronics

The TD350E is an innovative gate driver specifically designed to drive IGBTs and power MOSFETs. Manufactured by the renowned semiconductor company STMicroelectronics, this advanced driver is a perfect solution for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), induction heating, and wind power systems. The TD350E stands out for its high performance, reliability, and flexibility, making it an essential component for modern power management and conversion systems.

At the core of the TD350E's capabilities is its ability to provide high peak current drive, with both high-side and low-side outputs. The driver is capable of supplying up to 2.5A of peak current, ensuring that power devices switch efficiently and with minimal delay. This results in improved overall system performance and reduced power losses during operation.

One of the key features of the TD350E is its integrated advanced control and protection functions. It includes a desaturation detector, which is crucial for preventing damage to the IGBT in the event of overcurrent conditions. Additionally, the Soft Shut Down (SSD) feature ensures safe IGBT turn-off before entering fault mode, further enhancing the protection of your power system.

The TD350E also boasts a negative gate drive capability, which enhances the ability to turn off the IGBT securely and quickly, thereby improving the system's reliability and efficiency. Moreover, the driver is equipped with an Under-Voltage Lockout (UVLO) function for both high-side and low-side, ensuring that the IGBT or MOSFET operates only when there is sufficient gate voltage, avoiding malfunction or damage due to insufficient power supply.

With its wide range of operating temperatures, from -40°C to 150°C, the TD350E is designed to perform reliably in harsh environments. Its flexibility is further enhanced by the adjustable turn-on and turn-off resistors, allowing designers to tailor the driver's performance to specific application requirements.

Overall, the TD350E from STMicroelectronics represents a state-of-the-art solution for driving power IGBTs and MOSFETs with precision and protection. Its combination of performance, integrated features, and flexibility make it an ideal choice for engineers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.7588 $51.8292
22+ $4.7252 $103.9544
33+ $4.5775 $151.0575
46+ $4.4298 $203.7708
59+ $4.2822 $252.6498
79+ $3.8392 $303.2968
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,620 pieces
MOQ: 9 pcs
Order Increment : 1 piece
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