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ES1JL R3G

Part No ES1JL R3G
Manufacturer Taiwan Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 1A SUB SMA / Diode Standard 600 V 1A Surface Mount Sub SMA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Taiwan Semiconductor Corporation
Package Tape & Reel
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz
Mounting SMD (SMT)
Package / Case DO-219AB
Supplier Device Package Sub SMA
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number ES1J
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names ES1JL R3GCT-ND,ES1JLR3GTR,ES1JLR3GDKR,ES1JL R3GCT,ES1JL R3GTR-ND,ES1JLR3GCT,ES1JL R3GDKR,ES1JL R3GDKR-ND,ES1JL R3GTR
Standard Package 1,800
Win Source Part Number 1057782-ES1JL R3G
Ultra Librarian 3D Model Ultra Librarian ES1JL R3G CAD Model

Description

The ES1JL R3G rectifier diode is a discrete semiconductor product manufactured by Taiwan Semiconductor Corporation.

  • Application: Rectification
  • Direction: Unidirectional
  • Maximum Reverse Voltage: 600V
  • Average Rectified Current: 1A
  • Forward Voltage: 1.7V @ 1A
  • Reverse Recovery Time: 35ns
  • Package: DO-219AB
  • Mounting: SMD (SMT)
  • Capacitance: 8pF @ 4V, 1MHz
  • Operating Temperature Range: -55°C to 150°C
  • Popularity Rating: Medium

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