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Same model may have multiple batches, images only for reference.
TSM060N03PQ33 RGG Real Image
Same model may have multiple batches, images only for reference.

TSM060N03PQ33 RGG

Part No TSM060N03PQ33 RGG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
TSM060N03PQ33 RGG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25.4nC @ 10V
Max Input Capacitance 1342pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PDFN (3x3)
Dimension 8-PowerWDFN
Win Source Part Number 1114680-TSM060N03PQ33 RGG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM060N03PQ33 RGG CAD Model

Description

The TSM060N03PQ33 RGG is an N-Channel MOSFET manufactured by Taiwan Semiconductor.

  • Supply and Demand: Balanced
  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 62A (Tc)

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