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2SA1182-Y(TE85L,F)

Part No 2SA1182-Y(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.5A S-MINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 100mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 200MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 197480-2SA1182-Y(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1182-Y(TE85L,F) CAD Model

Description

2SA1182-Y(TE85L,F) Transistor

The 2SA1182-Y(TE85L,F) is engineered with functionality and precision in mind, serving as an integral component in circuits requiring reliable switching and amplification. Its durability under stress and ease of integration make it a favored choice among electronics professionals.

  • DC-DC Converters
  • Onboard Signal Processing
  • Automatic Gain Control Circuits

Features and Benefits

  • Consistent performance at varying temperatures
  • Optimized for low voltage applications
  • Compact form factor for high-density board designs

This transistor is especially suitable for projects and applications where space is at a premium, without compromising on performance quality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1351 $58.0930
1,045+ $0.1109 $115.8905
1,615+ $0.1074 $173.4510
2,225+ $0.1040 $231.4000
2,875+ $0.1005 $288.9375
3,850+ $0.0901 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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