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2SC2655

Part No 2SC2655
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 2A 50V TO226-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 075459-2SC2655
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2655 CAD Model

Description

The 2SC2655 is a robust high-frequency NPN transistor that excels in applications requiring both power and efficiency. It is highly valued for its stability and high-gain capabilities, making it a versatile tool for a range of technological requirements.

Features and Benefits

  • High-Gain Performance: Delivers exceptional amplification, essential for high-quality signal outputs.
  • Energy Efficiency: Operates efficiently with low energy waste, contributing to sustainable electronic designs.
  • Extended Temperature Range: Operates reliably under various environmental conditions, enhancing system robustness.

Applications

  • Broadcasting Systems: Integral to devices that require consistent signal transmission and reception.
  • Electronic Test Equipment: Used to ensure precise measurement processes in testing and diagnostic gadgets.
  • Wireless Communication: Crucial in improving wireless communication systems through enhanced signal processing.

With its superior characteristics, the 2SC2655 is ideally positioned to meet the evolving demands of modern electronic installations, providing engineers with a reliable and powerful component to enhance their technological solutions.

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