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2SC3299

Part No 2SC3299
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description SILICON NPNEPITAXIAL TYPE(PCT PROCESS)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155705-2SC3299
Popularity Medium
Supply and Demand Status Balance
Family Name 2SC3299
Introduction Date April 22, 2006
ECCN EAR99
Ultra Librarian 3D Model Ultra Librarian 2SC3299 CAD Model

Description

Product Description: 2SC3299

The 2SC3299 is a robust NPN bipolar junction transistor (BJT) designed primarily for high-voltage and high-current applications. Due to its durability and efficiency, it plays a critical role in power amplifiers and switching power supply circuits. Known for its reliability, manufacturers leverage the 2SC3299 for demanding electronic projects that require stable performance under varying loads and conditions.

Features and Benefits

  • High Voltage Capacity: With a maximum collector-emitter voltage of 180V, the 2SC3299 is suitable for high-power applications and environments.
  • Excellent Current Handling: This transistor can handle collector currents up to 15A, making it ideal for power-intensive projects.
  • Low Saturation Voltage: Reduces power loss and enhances efficiency in switching circuits.

Applications

  • Audio power amplifiers
  • DC-DC converters
  • Switching regulators
  • Motor speed control
  • General purpose amplification

Additional Details

The 2SC3299 integrates advanced materials and construction techniques for enhanced durability, ensuring minimal performance degradation over time. Designers appreciate the device for its adaptability in both linear and switching applications. The transistor's compact TO-3P package facilitates efficient thermal management, crucial for avoiding heat buildup in high-power circuits, thus extending the component's operational lifespan.

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