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2SC4116-BL,LF

Part No 2SC4116-BL,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.15A USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 350 @ 2mA, 6V
Maximum Power Dissipation 100mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 106346-2SC4116-BL,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC4116-BL,LF CAD Model

Description

2SC4116-BL,LF Transistor

The 2SC4116-BL,LF is a highly reliable NPN silicon transistor designed for applications that demand high linearity and low distortion. It is particularly effective in amplifier driver stages, RF circuits, and instrumentation systems, where performance and precision are imperative.

  • Amplifier driver stages
  • RF circuitry
  • Instrumentation systems
  • Signal conditioning circuits

Features and Benefits

  • High Linearity: Provides excellent signal accuracy, crucial for applications requiring minimal distortion.
  • Low Distortion: Ensures high-quality signal output, critical for high-fidelity audio and effective RF applications.
  • Adaptable Design: Suitable for a range of frequency bands, enhancing flexibility in design applications.
  • Enhanced Durability: Built to handle demanding operational and environmental extremes.

The design strengths of the 2SC4116-BL,LF situate it as an excellent choice for projects focused on precision and detail, offering superior performance in demanding environments.

Additional Details

Engineers and designers value the 2SC4116-BL,LF for its balance of performance and efficiency, allowing for seamless integration into complex electronic systems. This transistor supports advancement in electronic communication and processing technologies, making it a staple in innovative circuit designs.

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