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Same model may have multiple batches, images only for reference.
2SD2012FM
Same model may have multiple batches, images only for reference.

2SD2012FM

Part No 2SD2012FM
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Transistor NPN 60V 3A TO220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 60 V
Collector Emitter Voltage (VCEO) 1 V
Max Collector Current 3 A
Max Power Dissipation 2 W
Mount Through Hole
Number of Pins 3
Packaging Bulk
Polarity NPN
Radiation Hardening No
RoHS Compliant
Transition Frequency 3 MHz
Win Source Part Number 1037404-2SD2012FM
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SD2012FM CAD Model

Description

The Toshiba Semiconductor and Storage 2SD2012FM is a NPN RF transistor that comes in a TO-220-3 package.

  • Package: TO-220-3
  • Maximum Power Dissipation: 2 W
  • Collector Emitter Voltage: 1 V
  • Collector Base Voltage: 60 V
  • Collector Emitter Breakdown Voltage: 60 V
  • Maximum Collector Current: 3 A
  • Transition Frequency: 3 MHz
  • RoHS Compliant: Yes
  • Radiation Hardening: No
  • Supply and Demand Status: Shortage
  • Popularity: Low
  • Alternative Part: 2SD2012FM2SD2012(F,M)

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