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Same model may have multiple batches, images only for reference.
CUS10I30A(TE85L,QM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

CUS10I30A(TE85L,QM

Part No CUS10I30A(TE85L,QM
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 30V 1A US-FLAT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Diode Type Schottky
Voltage - DC Reverse (Vr) (Maximum) 30V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 390mV at 700mA
Speed Fast Recovery = 200mA (Io)
Current - Reverse Leakage at Vr 60μA at 30V
Capacitance at Vr, F 50pF at 10V, 1MHz
Mounting Style SMD
Manufacturer Package SC-76, SOD-323
Supplier Device Package US-FLAT (1.25x2.5)
Operating Temperature - Junction 150°C (Maximum)
Manufacturer Pack Quantity 4,000
Win Source Part Number 752744-CUS10I30A(TE85L,QM
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CUS10I30A(TE85L,QM CAD Model

Description

The CUS10I30A(TE85L,QM is a Schottky diode used in electronic devices, manufactured by Toshiba Semiconductor and Storage.

  • Voltage Rating: 30V
  • Average Rectified Current: 1A
  • Mounting Type: Surface Mount
  • Package / Case: US-FLAT (1.25x2.5)
  • Fast Recovery: 200mA (Io)
  • Operating Temperature: 150°C
  • Reverse Leakage Current: 60μA @ 30V
  • Capacitance: 50pF @ 10V, 1MHz

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