The Toshiba Semiconductor and Storage 275724-HN4A56JU is a dual PNP transistor with a maximum collector current of 150mA and a maximum collector-emitter breakdown voltage of 50V. The maximum collector-emitter saturation voltage is 300mV at 10mA and 100mA. The collector cut-off current (Max) is 100nA (ICBO) and the typical gain (hFE) (Min) is 120 at 2mA, 6V. This transistor comes in a USV package and operates at a temperature range of 150°C (TJ). The maximum power dissipation is 200mW. The supply and demand status is limited.