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Same model may have multiple batches, images only for reference.
MT3S111TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

MT3S111TU,LF

Part No MT3S111TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain 12.5dB
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-SMD, Flat Lead
Supplier Device Package UFM
Base Product Number MT3S111
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1314468-MT3S111TU,LF
Ultra Librarian 3D Model Ultra Librarian MT3S111TU,LF CAD Model

Description

The MT3S111TU,LF is a bipolar NPN transistor designed for use in RF applications.

  • Power: 800mW
  • Voltage Breakdown: 6V
  • Maximum Collector Current: 100mA
  • Gain: 12.5dB
  • DC Current Gain: 200 @ 30mA and 5V
  • Frequency Transition: 10GHz
  • Noise Figure: 0.6dB to 0.85dB @ 500MHz to 1GHz
  • Package: 3-SMD, Flat Lead
  • Supplier Device Package: UFM
  • Temperature Range: 150°C
  • Manufacturer: Toshiba Semiconductor and Storage
  • ECCN: EAR99
  • HTSUS: 8541.21.0075

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265+ $0.4424 $117.2360
405+ $0.4285 $173.5425
560+ $0.4146 $232.1760
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965+ $0.3592 $346.6280
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Availability: 66,000 pieces
MOQ: 110 pcs
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