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Same model may have multiple batches, images only for reference.
RN1105MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1105MFV,L3F

Part No RN1105MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.15W VESM
Datasheet
RN1105MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 096858-RN1105MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 8k pcs
Ultra Librarian 3D Model Ultra Librarian RN1105MFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage RN1105MFV,L3F is an NPN-Pre-Biased transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA.

  • Typical Gain: 80 @ 10mA, 5V
  • Package: VESM
  • Mounting: SMD (SMT)
  • Resistor R1: 2.2k Ohms
  • Resistor R2: 47k Ohms
  • Maximum Power Dissipation: 150mW
  • Collector Cut-Off Current: 500nA
  • Low Vce (sat): 300mV @ 500μA and 5mA
  • Supply and Demand: sufficient
  • Pieces per package: 8k

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Quantity Unit Price Ext. Price
930+ $0.0624 $58.0320
2,275+ $0.0508 $115.5700
3,490+ $0.0497 $173.4530
4,765+ $0.0485 $231.1025
6,250+ $0.0462 $288.7500
8,335+ $0.0416 $346.7360
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Availability: 181,200 pieces
MOQ: 930 pcs
Order Increment : 1 pcs
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