The RN1112CT is a general-purpose bipolar transistor manufactured by Toshiba Semiconductor and Storage, designed for switching and amplification applications. Like other transistors in the RN11xxCT series, it offers versatility and reliability in electronic circuits.

Applications:

• Switching circuits
• Amplifier circuits
• Inverter circuits
• Driver circuits
• General purpose amplification

Features:

• NPN type transistor: Suitable for various circuit configurations.
• Low saturation voltage: Reduces power loss during switching.
• High current gain (hFE): Provides good amplification characteristics.
• Small surface mount package: Contributes to space-saving designs.
• Lead-free plating; RoHS compliant

Benefits:

• Efficient switching: Low saturation voltage minimizes power dissipation.
• Versatile application: Suitable for a wide range of circuits.
• Compact design: Small package allows for high-density board designs.
• Reliable performance: Designed for stable operation in demanding applications.

Additional Details:

The RN1112CT has a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 150mA. The DC current gain (hFE) is typically between 100 and 200. The saturation voltage (VCE(sat)) is typically 0.2V at IC = 100mA. The device is available in a small surface-mount package (SOT-23), suitable for high-density circuit board assembly. The hFE range is a key parameter for selecting this transistor based on specific amplification needs.