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Same model may have multiple batches, images only for reference.
RN1130MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1130MFV,L3F

Part No RN1130MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.15W VESM
Datasheet
RN1130MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Resistor - Emitter Base (R2) (Ohms) 100k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 122079-RN1130MFV,L3F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1130MFV,L3F CAD Model

Description

The electronic component with Id 304097 is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 122079-RN1130MFV,L3F
  • Packaging: Reel - TR
  • Mounting Type: Surface mount device (SMD)
  • Transition Frequency: 250MHz
  • Transistor Polarity: NPN-pre-biased
  • Base Resistor (R1): 100k ohms
  • Emitter-Base Resistor (R2): 100k ohms
  • Category: Discrete semiconductor products
  • Status: Active
  • Case/Package Type: VESM
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 500μA, 5mA
  • Collector Cut-off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 100 @ 10mA, 5V
  • Maximum Power Dissipation: 150mW
  • Supply and Demand Status: Balanced

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