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Same model may have multiple batches, images only for reference.
RN1309(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1309(TE85L,F)

Part No RN1309(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
RN1309(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 104590-RN1309(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1309(TE85L,F) CAD Model

Description

This electronic component is a NPN transistor with a pre-biased configuration, manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 104590-RN1309(TE85L,F)
  • Category: Discrete semiconductor product
  • Maximum Collector Current: 100mA
  • Supply and Demand Status: Balanced
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW

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