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Same model may have multiple batches, images only for reference.
RN1427 Real Image
Same model may have multiple batches, images only for reference.

RN1427

Part No RN1427
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
RN1427 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 90 @ 100mA, 1V
Max Vce (sat) 250mV @ 1mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 062571-RN1427
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1427 CAD Model

Description

The Toshiba Semiconductor and Storage RN1427 is an NPN-pre-biased transistor with a frequency transition of 300MHz.

  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • Mounting Type: SMD (SMT) technology
  • Case/Package: S-Mini
  • Current - Collector (Max): 800mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 250mV @ 1mA, 50mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 90 @ 100mA, 1V
  • Power - Max: 200mW

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Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
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Availability: 23,400 pieces
MOQ: 345 pcs
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