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RN1905,LF

Part No RN1905,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 101966-RN1905,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1905,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1905,LF is a dual NPN pre-biased transistor designed for use in a variety of applications, including amplifiers, oscillators, and switching circuits.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Suitable for: low-power applications
  • Packaged in: a US6 case
  • Available in: reel - TR packaging
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0938 $58.1560
1,500+ $0.0771 $115.6500
2,325+ $0.0746 $173.4450
3,200+ $0.0722 $231.0400
4,140+ $0.0698 $288.9720
5,540+ $0.0626 $346.8040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,240 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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