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RN2407(T5R,T)

Part No RN2407(T5R,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family Transistors(BJT) - Single,Pre - Biased
Win Source Part Number 183783-RN2407(T5R,T)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2407(T5R,T) CAD Model

Description

The RN2407(T5R,T) is a silicon N-channel junction field-effect transistor (JFET) manufactured by Toshiba Semiconductor and Storage, designed for low-noise amplifier and analog switching applications. The suffix (T5R,T) likely denotes a specific packaging and taping configuration, typically used for automated assembly processes on printed circuit boards.

Applications

  • Low-noise amplifiers (LNAs) in communication receivers
  • Audio preamplifiers in high-fidelity audio equipment
  • Analog switches for signal routing and multiplexing
  • Voltage-controlled resistors in electronic tuning circuits
  • Instrumentation amplifiers for precision measurements

Features

  • N-channel JFET design
  • Low noise figure for enhanced signal clarity
  • High input impedance to minimize signal source loading
  • High transconductance for efficient signal amplification
  • Packaging (T5R,T) suitable for automated assembly
  • Low gate leakage current for stable operation

Benefits

  • Improved signal-to-noise ratio in sensitive amplifier stages
  • Reduced signal distortion in analog switching applications
  • Simplified manufacturing process with automated assembly compatibility
  • Stable and reliable performance over a wide range of operating conditions
  • Efficient signal amplification with low power consumption

Additional Details

The RN2407(T5R,T) offers high input impedance and low noise characteristics. The (T5R,T) suffix specifies a tape and reel configuration optimized for automated pick-and-place assembly, improving manufacturing efficiency. It's crucial to handle this component with care to avoid electrostatic discharge (ESD) damage. Consult the official Toshiba datasheet for detailed electrical specifications, thermal resistance, and absolute maximum ratings. Proper biasing is essential to achieve optimal performance and prevent damage by exceeding voltage or current limits.

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