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Same model may have multiple batches, images only for reference.
RN2902FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2902FE,LF

Part No RN2902FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W ES6
Datasheet
RN2902FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 101693-RN2902FE,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2902FE,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN2902FE,LF is a PNP pre-biased dual transistor designed for use in discrete semiconductor products.

  • Package: ES6 case
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Typical Gain (hFE): 50 @ 10mA and 5V
  • Collector Cut-off Current (max): 500nA
  • Frequency Transition: 200MHz
  • Ideal for: Use in a variety of applications
  • Packaging: Reel packaging
  • Status: Currently active in the market

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Quantity Unit Price Ext. Price
55+ $1.0776 $59.2680
135+ $0.8836 $119.2860
205+ $0.8559 $175.4595
280+ $0.8293 $232.2040
365+ $0.8016 $292.5840
485+ $0.7184 $348.4240
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