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RN4986FE,LF

Name: RN4986FE,LF
Brand: Toshiba Semiconductor and Storage
SKU: 297435
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN4986FE,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays, Pre - Biased
Description	TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet	RN4986FE,LF Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	250MHz, 200MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	ES6
Win Source Part Number	098741-RN4986FE,LF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN4986FE,LF CAD Model

Alternative Products

Description

The RN4986FE,LF is a dual NPN and PNP pre-biased transistor from Toshiba Semiconductor and Storage. It is designed for use in discrete semiconductor products and has a maximum current collector of 100mA. The transistor comes in an ES6 case/package and has a VCEO maximum collector-emitter breakdown voltage of 50V.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
35+	$1.7071	$59.7485
85+	$1.4010	$119.0850
130+	$1.3571	$176.4230
180+	$1.3132	$236.3760
230+	$1.2693	$291.9390
305+	$1.1388	$347.3340

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 59,800 pieces

MOQ: 35 pcs

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