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Same model may have multiple batches, images only for reference.
RN4987FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4987FE,LF

Part No RN4987FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4987FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 096663-RN4987FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4987FE,LF CAD Model

Description

This electronic component is a transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 096663-RN4987FE,LF
  • Product Category: discrete semiconductor products
  • Market Status: active
  • Transistor Type: pre-biased (dual) with NPN and PNP polarity
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9864 $59.1840
145+ $0.8097 $117.4065
225+ $0.7842 $176.4450
305+ $0.7588 $231.4340
395+ $0.7334 $289.6930
530+ $0.6572 $348.3160
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