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Same model may have multiple batches, images only for reference.
SSM4K27CTTPL3 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM4K27CTTPL3

Part No SSM4K27CTTPL3
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V .5A CST4
Datasheet
SSM4K27CTTPL3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1.1V @ 1mA
Max Input Capacitance 174pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 205 mOhm @ 250mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST4 (1.2x0.8)
Dimension 4-SMD, No Lead
Win Source Part Number 096578-SSM4K27CTTPL3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM4K27CTTPL3 CAD Model

Description

The Toshiba Semiconductor and Storage 096578-SSM4K27CTTPL3 is an N-channel MOSFET with a power dissipation of 400mW and a continuous drain current of 500mA.

  • Drain-source breakdown voltage: 20V
  • Gate-source threshold voltage: 1.1V @ 1mA
  • Package: CST4 (1.2x0.8)
  • Packaging: reel
  • The MOSFET is suitable for use in discrete semiconductor products applications.

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