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TK10A60D(Q,M)

Part No TK10A60D(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 043097-TK10A60D(Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK10A60D(Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK10A60D(Q,M) is a MOSFET technology with an N-Channel polarity.

  • Power Dissipation: 45W (Tc)
  • Product Type: Discrete Semiconductor Product
  • Mounting Type: Through-Hole
  • Case/Package: TO-220SIS
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1350pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 750 mOhm @ 5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4082 $57.7968
59+ $1.9762 $116.5958
91+ $1.9138 $174.1558
125+ $1.8526 $231.5750
162+ $1.7914 $290.2068
216+ $1.6055 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,300 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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