The Toshiba Semiconductor and Storage TK13A45D(STA4,Q,M) is an N-channel MOSFET transistor that has a maximum power dissipation of 45W (Tc).

• Power Dissipation: 45W (Tc)
• Supply and Demand Status: Sufficient
• Case/Package: TO-220SIS
• Mounting: Through hole
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On @ Id,Vgs: 460 mOhm @ 6.5A, 10V
• Gate-Source Threshold Voltage: 4V @ 1mA
• Max Gate Charge: 25nC @ 10V
• Maximum Input Capacitance: 1350pF @ 25V
• Drain-Source Breakdown Voltage: 450V
• Continuous Drain Current @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range: 150°C (TJ)