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Same model may have multiple batches, images only for reference.
TK16J60W Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK16J60W

Part No TK16J60W
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 15.8A TO-3P(N)
Datasheet
TK16J60W Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 790μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1350pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Dimension TO-3P-3, SC-65-3
Win Source Part Number 043100-TK16J60W
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK16J60W CAD Model

Description

The Toshiba Semiconductor and Storage TK16J60W is a N-channel super junction MOSFET that is designed to be used in various applications that require a high-performance power transistor.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15.8A @ 25°C
  • Supply and demand: balance
  • Popularity: medium
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1678 $52.0272
50+ $2.0280 $101.4000
77+ $1.9581 $150.7737
110+ $1.8182 $200.0020
143+ $1.7483 $250.0069
179+ $1.6783 $300.4157
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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