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TK20V60W5,LVQ(S

Part No TK20V60W5,LVQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 20A 5-Pin DFN EP T/R
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RoHS Non-Compliant
Win Source Part Number 1099430-TK20V60W5,LVQ(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK20V60W5,LVQ(S CAD Model

Description

The TK20V60W5,LVQ(S) is a 600V super junction MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power conversion in a variety of applications. Its super junction structure enables fast switching and low on-resistance, contributing to reduced power losses and improved system performance.

Applications

  • Power Factor Correction (PFC) circuits
  • Switch-Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Solar inverters
  • Motor control circuits

Features

  • VDSS: 600V
  • RDS(on) (Max): 0.199 Ohm
  • ID: 20A
  • Package: TO-220SIS
  • Super Junction MOSFET
  • Low On-Resistance
  • High-Speed Switching
  • Easy to use and parallel

Benefits

  • High Efficiency: The low on-resistance minimizes conduction losses, resulting in higher efficiency in power conversion applications.
  • Fast Switching: The super junction structure enables fast switching speeds, reducing switching losses and improving overall system performance.
  • Reliable Performance: Toshiba's reputation for quality and reliability ensures stable and consistent performance in demanding applications.
  • Simplified Thermal Management: The TO-220SIS package facilitates efficient heat dissipation, simplifying thermal management design.
  • Improved Power Density: High efficiency translates to lower heat generation, enabling higher power density designs.

Additional Details

The TK20V60W5,LVQ(S) MOSFET is specifically engineered to minimize switching losses and improve the efficiency of power supplies. Its robust design and high avalanche ruggedness contribute to long-term reliability in demanding operating conditions. The TO-220SIS package provides excellent thermal characteristics, allowing for efficient heat dissipation. It is RoHS compliant and suitable for applications requiring high power density and efficiency. The device's low gate charge (Qg) further contributes to improved switching performance. This MOSFET is optimized for hard-switching topologies and offers a cost-effective solution for high-voltage power conversion applications.

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