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TK31N60W5,S1VF

Part No TK31N60W5,S1VF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30.8A TO-247 / Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Maximum) @ Vgs 105nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3000pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 230W (Tc)
Rds On (Maximum) @ Id, Vgs 99 mOhm @ 15.4A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 796839-TK31N60W5,S1VF
Popularity Medium
Supply and Demand Status Limited
Family Name TK31N60W5
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK31N60W5,S1VF CAD Model

Description

The Toshiba Semiconductor and Storage TK31N60W5,S1VF is a high-performance MOSFET transistor.

  • Maximum operating temperature: 150°C
  • Maximum drain-source voltage: 600V
  • Maximum continuous drain current: 30.8A @ 25°C
  • Gate-source threshold voltage: 4.5V @ 1.5mA
  • Gate charge: 105nC @ 10V
  • Maximum power dissipation: 230W
  • Package: TO-247-3
  • Mounting: through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6306 $61.9366
25+ $4.6200 $115.5000
39+ $4.4756 $174.5484
54+ $4.3313 $233.8902
69+ $4.1869 $288.8961
93+ $3.7538 $349.1034
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 660 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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