The Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component designed for use in a variety of applications.

• With a maximum power dissipation of 35W (Tc), this N-Channel MOSFET is capable of handling significant amounts of power.
• It features a drain-source breakdown voltage of 500V and a continuous drain current of 5A (Ta) @ 25°C.
• The gate-source threshold voltage is 4.4V @ 1mA, and the maximum gate charge is 11nC @ 10V.
• The maximum input capacitance is 490pF @ 25V, and the maximum Rds On @ Id,Vgs is 1.5 Ohm @ 2.5A, 10V.
• This MOSFET is available in TO-220SIS packaging and is part of the Discrete Semiconductor Products category.
• The supply and demand status is balanced.