This MOSFET is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 121604-TK5A65DA(STA4,Q,M).

• It belongs to the category of discrete semiconductor products.
• The packaging is tube/rail and mounting is through hole.
• The technology is MOSFET and the polarity is N-channel.
• The power dissipation (Max) is 35W (Tc).
• The drive voltage (Max Rds On, Min Rds On) is 10V.
• The temperature range for operating is 150°C (TJ) and the case/package is TO-220SIS.
• It has a dimension of TO-220-3 Full Pack and a drain-source breakdown voltage of 650V.
• The continuous drain current @ 25°C is 4.5A (Ta) and the gate-source threshold voltage is 4.4V @ 1mA.
• The max gate charge is 16nC @ 10V and the max input capacitance is 700pF @ 25V.
• The maximum gate-source voltage is ±30V and the maximum Rds On @ Id, Vgs is 1.67 Ohm @ 2.3A, 10V.
• The supply and demand status is balanced.