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TK6A53D

Part No TK6A53D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 6A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212913-TK6A53D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6A53D CAD Model

Description

It is a balance in terms of supply and demand status. The TK6A53D is designed for use in a wide range of applications, including power supplies, motor control, and lighting.

  • Maximum Drain-Source Voltage: 525V
  • Continuous Drain Current: 6A @ 25°C
  • Package: TO-220SIS

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.0933 $63.6531
16+ $7.4613 $119.3808
24+ $7.2280 $173.4720
34+ $6.9947 $237.8198
43+ $6.7614 $290.7402
58+ $6.0626 $351.6308
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,150 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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