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Same model may have multiple batches, images only for reference.
TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK9A60D(STA4,Q,M)

Part No TK9A60D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A TO-220SIS
Datasheet
TK9A60D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 830 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050576-TK9A60D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK9A60D(STA4,Q,M) CAD Model

Description

This Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component that is suitable for use in many different applications.

  • Power Dissipation: 45W (Tc)
  • Continuous Drain Current: 9A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 600V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 830 mOhm @ 4.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4712 $58.9000
300+ $0.3869 $116.0700
465+ $0.3742 $174.0030
640+ $0.3627 $232.1280
830+ $0.3500 $290.5000
1,105+ $0.3142 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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